Ion assisted deposition has evolved from a collection of individual “recipes” to the use of ion energy per deposited atom as a measure of this dose, to the variation of this dose with material melting temperature. The energy range of interest for most applications has narrowed, focusing at present on the low energy range from about 25eV to about 100eV. Dense, low-defect films are believed to be generated in this range by lattice vibrations. Ion collision effects tend to be confined to the surface below -25eV, while damage is introduced by the excessive penetration of ions above -100eV.

Use this tool to help determine the ion current density recommended for successful IBAD processes.

Ta 2500 CeO2, MgO
700 Y2O3
500 HfO2, ZrO2
200 Al2O3, Ti2O3
150 TiO2
Cr, Nb 125 Si3N4, Ta2O5, VO2
Co, Fe, Ni, Pt, Ti, Zr 50 Ce2O3, SiO2
Ag, Al, Au, Cu, Ge, Si 25 GaAs, MgF2

Read More on Ion-Assist Doses

For help choosing the correct ion source for your specific system, contact the KRI sales team.

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